Effect of post-annealing on microstructure and electrical properties of BaTiO3 thick films grown by Aerosol Deposition (AD)

Anass Chrir (1) , Oscar Rojas (2) , Laurence Boyer (2) , Olivier Durand (2) , Pascal Marchet (1)

1 IRCER-AXE3 - IRCER - Axe 3 : organisation structurale multiéchelle des matériaux
2 CTTC - Centre de Transfert de Technologies Céramiques

In this work, we successfully deposited highly dense BaTiO3 thick films at room temperature on kovar ® substrates using aerosol deposition method (AD). As-deposited films exhibited nonferroelectric behavior due to grain size effect. Post-annealing below 800 °C released residual stress without promoting grain growth for both air and argon annealing atmospheres. Hence, it enhanced relative permittivity, electrical resistivity (10 12 Ω.cm) and reduced leakage currents (<1 µA.cm-2). Annealing at 800 and 900 °C induced significant grain growth, favoring the recovery of ferroelectric properties. Grain growth was further enhanced for argon-annealed BT films. For annealing temperatures ≥ 800 °C, both air and argon annealing induced a piezoelectric behavior, clearly evidenced by the strainfield (S-E) cycles. The 900 °C argonannealed film exhibited the highest properties, with a Pr of ~6.6 µC.cm-2 and a maximum strain of 0.04% under 10 kV.mm-1 .

Mots clés: Aerosol deposition thick films post-annealing microstructure electrical properties; Aerosol deposition; thick films; post-annealing; microstructure; electrical properties

Domaines: Chimie

Anass Chrir, Oscar Rojas, Laurence Boyer, Olivier Durand, Pascal Marchet. Effect of post-annealing on microstructure and electrical properties of BaTiO3 thick films grown by Aerosol Deposition (AD). Journal of the European Ceramic Society, 2024, 44, pp.3965. ⟨10.1016/j.jeurceramsoc.2024.01.073⟩. ⟨hal-04469308⟩